FJZ594JCTF ,Silicon N-Channel Junction FETFJZ594JFJZ594JCapacitor Microphone
FJZ594JTF ,Silicon N-Channel Junction FETApplications Especially Suited for use in Audio, Telephone Capacitor Microphones3 Excellent Volt ..
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FJZ594JBTF-FJZ594JCTF-FJZ594JTF
Silicon N-Channel Junction FET
FJZ594J FJZ594J Capacitor Microphone Applications Especially Suited for use in Audio, Telephone Capacitor Microphones 3 Excellent Voltage Characteristic Excellent Transient Characteristic 2 1 SOT-623F 1. Drain 2. Source 3. Gate Si N-channel Junction FET Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Gate-Drain Voltage -20 V GDO I Gate Current 10 mA G I Drain Current 1 mA D P Power Dissipation 100 mW D T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Gate-Drain Breakdown Voltage I = -100uA -20 V GDO G V (off) Gate-Source Cut-off Voltage V =5V, I =1µA -0.6-1.5V GS DS D I Drain Current V =5V, V =0 150 350 µA DSS DS GS ly l Forward Transfer Admittance V =5V, V =0, f=1MHz 0.4 1.2 mS fs DS GS C Input Capacitance V =5V, V =0, f=1MHz 3.5 pF ISS DS GS C Output Capacitance V =5V, V =0, f=1MHz 0.65 pF RSS DS GS Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Max Units R Thermal Resistance, Junction to Ambient 1250 °C/W θjA I Classification DSS Classification B C I (µA) 150 ~ 240 210 ~ 350 DSS Marking J1B I grade dss ©2003 Rev. D, July 2003
