FJY4006R ,PNP Epitaxial Silicon Transistor with Bias ResistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
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FJY4006R
PNP Epitaxial Silicon Transistor with Bias Resistor
FJY4006R PNP Epitaxial Silicon Transistor July 2007 FJY4006R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =10KΩ, R =47KΩ) 1 2 • Complement to FJY3006R Equivalent Circuit C C S56 E BE B SOT - 523F Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C T Storage Temperature Range -55~150 °C STG T Junction Temperature 150 °C J P Collector Power Dissipation, by R 200 mW C θJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max Units R Thermal Resistance, Junction to Ambient 600 °C/W θJA * Minimum land pad size. Electrical Characteristics* T = 25°C unless otherwise noted C Symbol Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = -10 uA, IE = 0 -50 V V(BR)CEO Collector-Base Breakdown Voltage IC = -100 uA, IB = 0 -50 V ICBO Collector-Cutoff Current VCB = -40 V, IE = 0 -0.1 uA hFE DC Current Gain VCE = -5 V, IC = -5mA 68 VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA -0.3 V fT Current Gain - Bandwidth Product VCE = -10V, IC = -5 mA 200 MHz Ccb Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 5.5 pF VI(off) Input Off Voltage VCE = -5 V, IC = -100uA -0.3 V VI(on) Input On Voltage VCE = -0.3V, IC = -1mA -1.4 V R1 Input Resistor 7 10 13 KΩ R1/R2 Resistor Ratio 0.19 0.21 0.24 * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 1 FJY4006R Rev. B
