FJY4002R ,PNP Epitaxial Silicon Transistor with Bias ResistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY4002R ,PNP Epitaxial Silicon Transistor with Bias ResistorFJY4002R PNP Epitaxial Silicon Transistor July 2007FJY4002RtmPNP Epitaxial Silicon Transistor
FJY4002R ,PNP Epitaxial Silicon Transistor with Bias ResistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY4004R , PNP Epitaxial Silicon Transistor
FJY4006R ,PNP Epitaxial Silicon Transistor with Bias ResistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY4007R , PNP Epitaxial Silicon Transistor
FST63100 , Schottky MiniMod
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FJY4002R
PNP Epitaxial Silicon Transistor with Bias Resistor
FJY4002R PNP Epitaxial Silicon Transistor July 2007 FJY4002R tm PNP Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =10KΩ, R =10KΩ) 1 2 • Complement to FJY3002R Equivalent Circuit C C S52 E BE B SOT - 523F Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C T Storage Temperature Range -55~150 °C STG T Junction Temperature 150 °C J P Collector Power Dissipation, by R 200 mW C θJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max Units R Thermal Resistance, Junction to Ambient 600 °C/W θJA * Minimum land pad size. Electrical Characteristics* T = 25°C unless otherwise noted C Symbol Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = -10 uA, IE = 0 -50 V V(BR)CEO Collector-Base Breakdown Voltage IC = -100 uA, IB = 0 -50 V ICBO Collector-Cutoff Current VCB = -40 V, IE = 0 -0.1 uA hFE DC Current Gain VCE = -5 V, IC = -5mA 30 VCE(sat) Collector-Emitter Saturation Voltage IC = -10 mA, IB = -0.5 mA -0.3 V fT Current Gain - Bandwidth Product VCE = -10V, IC = -5 mA 200 MHz Ccb Output Capacitance VCB = -10 V, IE = 0, f = 1.0 MHz 5.5 pF VI(off) Input Off Voltage VCE = -5 V, IC = -100uA -0.5 V VI(on) Input On Voltage VCE = -0.3V, IC = -10mA -3 V R1 Input Resistor 7 10 13 KΩ R1/R2 Resistor Ratio 0.9 1.0 1.1 * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 1 FJY4002R Rev. B
