FJY3014R ,NPN Epitaxial Silicon TransistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY3015R , NPN Epitaxial Silicon Transistor
FJY4002R ,PNP Epitaxial Silicon Transistor with Bias ResistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY4002R ,PNP Epitaxial Silicon Transistor with Bias ResistorFJY4002R PNP Epitaxial Silicon Transistor July 2007FJY4002RtmPNP Epitaxial Silicon Transistor
FJY4002R ,PNP Epitaxial Silicon Transistor with Bias ResistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY4004R , PNP Epitaxial Silicon Transistor
FST6145 , Schottky MiniMod
FST63100 , Schottky MiniMod
FST6800 ,10-Bit Bus Switch with Precharged OutputsFST6800 10-Bit Bus Switch with Precharged OutputsJune 1997Revised November 2000FST680010-Bit Bus Sw ..
FST6800MTC ,10-Bit Bus Switch with Precharged OutputsElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsMin Typ Max(V)(N ..
FST6800MTC ,10-Bit Bus Switch with Precharged OutputsFeaturesThe Fairchild Switch FST6800 provides 10-bits of high-
FJY3014R
NPN Epitaxial Silicon Transistor
FJY3014R NPN Epitaxial Silicon Transistor July 2007 FJY3014R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=47KΩ) • Complement to FJY4014R Equivalent Circuit C C S14 E BE B SOT - 523F Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C T Storage Temperature Range -55~150 °C STG T Junction Temperature 150 °C J P Collector Power Dissipation, by R 200 mW C θJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max Units R Thermal Resistance, Junction to Ambient 600 °C/W θJA * Minimum land pad. Electrical Characteristics* T = 25°C unless otherwise noted C Symbol Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0 50 V V(BR)CEO Collector-Base Breakdown Voltage IC = 100 uA, IB = 0 50 V ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 0.1 uA hFE DC Current Gain VCE = 5 V, IC = 5 mA 68 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.3 V fT Current Gain - Bandwidth Product VCE = 10V, IC = 5 mA 250 MHz Ccb Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF VI(off) Input Off Voltage VCE = 5 V, IC = 100uA 0.5 V VI(on) Input On Voltage VCE = 0.2V, IC = 5mA 1.3 V R1 Input Resistor 3.2 4.7 6.2 KΩ R1/R2 Resistor Ratio 0.09 0.1 0.11 * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 1 FJY3014R Rev. B
