FJY3002R ,NPN Epitaxial Silicon Transistor with Bias ResistorFJY3002R NPN Epitaxial Silicon Transistor July 2007FJY3002RtmNPN Epitaxial Silicon Transistor
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FJY3008R ,NPN Epitaxial Silicon TransistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
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FJY3002R
NPN Epitaxial Silicon Transistor with Bias Resistor
FJY3002R NPN Epitaxial Silicon Transistor July 2007 FJY3002R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=10KΩ, R2=10KΩ) • Complement to FJY4002R Equivalent Circuit C C S02 E BE B SOT - 523F Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C T Storage Temperature Range -55~150 °C STG T Junction Temperature 150 °C J P Collector Power Dissipation, by R 200 mW C θJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max Units R Thermal Resistance, Junction to Ambient 600 °C/W θJA * Minimum land pad size. Electrical Characteristics* T = 25°C unless otherwise noted C Symbol Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0 50 V V(BR)CEO Collector-Base Breakdown Voltage IC = 100 uA, IB = 0 50 V ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 0.1 uA hFE DC Current Gain VCE = 5 V, IC = 5 mA 30 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.3 V fT Current Gain - Bandwidth Product VCE = 10V, IC = 5 mA 250 MHz Ccb Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF VI(off) Input Off Voltage VCE = 5 V, IC = 100uA 0.5 V VI(on) Input On Voltage VCE = 0.3V, IC = 10mA 3 V R1 Input Resistor 7 10 13 KΩ R1/R2 Resistor Ratio 0.9 1.0 1.1 * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 1 FJY3002R Rev. B
