FJY3001R ,NPN Epitaxial Silicon TransistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY3002R ,NPN Epitaxial Silicon Transistor with Bias ResistorFJY3002R NPN Epitaxial Silicon Transistor July 2007FJY3002RtmNPN Epitaxial Silicon Transistor
FJY3004R ,NPN Epitaxial Silicon Transistor with Bias ResistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FJY3004R ,NPN Epitaxial Silicon Transistor with Bias ResistorFJY3004R NPN Epitaxial Silicon Transistor July 2007FJY3004RtmNPN Epitaxial Silicon Transistor
FJY3005R , NPN Epitaxial Silicon Transistor
FJY3007R , NPN Epitaxial Silicon Transistor
FST34X245QSP ,32-Bit Bus SwitchFeaturesThe Fairchild Switch FST34X245 provides 32-bits of high
FJY3001R
NPN Epitaxial Silicon Transistor
FJY3001R NPN Epitaxial Silicon Transistor July 2007 FJY3001R tm NPN Epitaxial Silicon Transistor Features • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to FJY4001R Equivalent Circuit C C S01 E BE B SOT - 523F Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C T Storage Temperature Range -55~150 °C STG T Junction Temperature 150 °C J P Collector Power Dissipation, by R 200 mW C θJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25°C unless otherwise noted a Symbol Parameter Max Units R Thermal Resistance, Junction to Ambient 600 °C/W θJA * Minimum land pad size. Electrical Characteristics* T = 25°C unless otherwise noted C Symbol Parameter Test Condition MIN Typ MAX Units V(BR)CBO Collector-Emitter Breakdown Voltage IC = 10 uA, IE = 0 50 V V(BR)CEO Collector-Base Breakdown Voltage IC = 100 uA, IB = 0 50 V ICBO Collector-Cutoff Current VCB = 40 V, IE = 0 0.1 uA hFE DC Current Gain VCE = 5 V, IC = 10 mA 22 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.5 mA 0.3 V fT Current Gain - Bandwidth Product VCE = 10V, IC = 5 mA 250 MHz Ccb Output Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz 3.7 pF VI(off) Input Off Voltage VCE = 5 V, IC = 100uA 0.5 V VI(on) Input On Voltage VCE = 0.3V, IC = 20mA 3 V R1 Input Resistor 3.2 4.7 6.2 KΩ R1/R2 Resistor Ratio 0.9 1.0 1.1 * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2006 1 FJY3001R Rev. B
