FJX733OTF ,PNP Epitaxial Silicon TransistorFJX733FJX7333Low Frequency Amplifier• Collector-Base Voltage V = -60VCBO• Complement to FJX94521SOT ..
FJX733YTF ,PNP Epitaxial Silicon TransistorFJX733FJX7333Low Frequency Amplifier• Collector-Base Voltage V = -60VCBO• Complement to FJX94521SOT ..
FJX945GTF ,NPN Epitaxial Silicon TransistorFJX945FJX945Audio Frequency Amplifier3High Frequency OSC.• Collector-Base Voltage V =60VCBO• High C ..
FJX945OTF ,NPN Epitaxial Silicon TransistorFJX945FJX945Audio Frequency Amplifier3High Frequency OSC.• Collector-Base Voltage V =60VCBO• High C ..
FJX945YTF ,NPN Epitaxial Silicon TransistorFJX945FJX945Audio Frequency Amplifier3High Frequency OSC.• Collector-Base Voltage V =60VCBO• High C ..
FJY3001R ,NPN Epitaxial Silicon TransistorFeatures• Switching circuit, Inverter, Interface circuit, Driver Circuit• Built in bias Resistor (R ..
FST34X2245QSPX ,32-Bit Bus Switch with 25 Ohm Series Resistor in OutputsFST34X2245 32-Bit Bus Switch with 25 Series Resistors in OutputsDecember 2001Revised January 2005F ..
FST34X245 ,32-Bit Bus SwitchFeaturesThe Fairchild Switch FST34X245 provides 32-bits of high
FJX733OTF-FJX733YTF
PNP Epitaxial Silicon Transistor
FJX733 FJX733 3 Low Frequency Amplifier • Collector-Base Voltage V = -60V CBO • Complement to FJX945 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -150 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100, I=0 -60 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA. I=0 -50 V CEO C B BV Emitter-Base Breakdown Voltage I = -10. I=0 - 5 V EBO E C I Collector Cut-off Current V = -25V, I=0 -100nA CBO CB E I Emitter Cut-off Current V = -3V, I=0 -100nA EBO EB C h DC Current Gain V = -6V, I = -1mA 40 700 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.18 -0.3 V CE C B V (on) Base-Emitter On Voltage V = -6V, I = -1mA -0.50 -0.62 -0.80 V BE CE C f Current Gain Bandwidth Product V = -6V, I = -10mA 50 180 MHz T CE C C Output Capacitance V = -10V, I = 0 2.8 pF ob CB E f=1MHz NF Noise Figure V = -6V, I = -0.3mA 6.0 20 dB CE C f=1MHz, Rs=10K h Classification FE Classification R O Y G L h 40 ~ 80 70 ~ 140 120 ~ 240 200 ~ 400 350 ~ 700 FE Marking SBX Grade ©2002 Rev. B2, August 2002
