FJX4011RTF ,PNP Epitaxial Silicon TransistorFJX4011RFJX4011RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4012RTF ,PNP Epitaxial Silicon TransistorFJX4012RFJX4012RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4013RTF ,PNP Epitaxial Silicon TransistorFJX4013RFJX4013RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4014RTF ,PNP Epitaxial Silicon TransistorFJX4014RFJX4014RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX597JBTF ,Silicon N-Channel Junction FETApplications3• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Volt ..
FJX597JCTF ,Silicon N-Channel Junction FETApplications3• Especially Suited for use in Audio, Telephone Capacitor Microphones• Excellent Volt ..
FST33X257QSPX ,24:12 Multiplexer/Demultiplexer Bus SwitchFST33X257 24:12 Multiplexer/Demultiplexer Bus SwitchMay 2002Revised July 2002FST33X25724:12 Multipl ..
FST33X257QSPX ,24:12 Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST33X257 is a 24:12 high-speed
FJX4011RTF
PNP Epitaxial Silicon Transistor
FJX4011R FJX4011R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJX3011R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R S61 B PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -40 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -40 V CEO E B I Collector Cut-off Current V = -30V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.3 V CE C B C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1MHz f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C R Input Resistor 15 22 29 KΩ ©2002 Rev. A3, August 2002
