FJX4007RTF ,PNP Epitaxial Silicon TransistorFJX4007RFJX4007RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4008RTF ,PNP Epitaxial Silicon TransistorFJX4008RFJX4008RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4009RTF ,PNP Epitaxial Silicon TransistorFJX4009RFJX4009RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4010RTF ,PNP Epitaxial Silicon TransistorFJX4010RFJX4010RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4011RTF ,PNP Epitaxial Silicon TransistorFJX4011RFJX4011RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4012RTF ,PNP Epitaxial Silicon TransistorFJX4012RFJX4012RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX4007RTF
PNP Epitaxial Silicon Transistor
FJX4007R FJX4007R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =22KΩ, R =47KΩ) 1 2 • Complement to FJX3007R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 S57 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1MHz f Current Gain-Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C V (off) Input Off Voltage V = -5V, I = -100μA-0.4 V I CE C V (on) Input On Voltage V = -0.3V, I = -2mA -2.5 V I CE C R Input Resistor 15 22 29 KΩ 1 R /R Resistor Ratio 0.42 0.47 0.52 1 2 ©2002 Rev. A3, August 2002
