FJX4001RTF ,PNP Epitaxial Silicon TransistorFJX4001RFJX4001R3Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inter ..
FJX4002RTF ,PNP Epitaxial Silicon TransistorFJX4002RFJX4002RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4003RTF ,PNP Epitaxial Silicon TransistorFJX4003RFJX4003RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4004RTF ,PNP Epitaxial Silicon TransistorFJX4004RFJX4004RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4005RTF ,PNP Epitaxial Silicon TransistorFJX4005RFJX4005RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4006RTF ,PNP Epitaxial Silicon TransistorFJX4006RFJX4006RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX4001RTF
PNP Epitaxial Silicon Transistor
FJX4001R FJX4001R 3 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =4.7KΩ, R =4.7KΩ) 1 2 • Complement to FJX3001R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B S51 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -10mA 20 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V, I =-5mA 200 MHz T CE C C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz V (off) Input Off Voltage V = -5V, I = -100μA-0.5 V I CE C V (on) Input On Voltage V = -0.3V, I = -20mA -3 V I CE C R Input Resistor 3.2 4.7 6.2 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A2, August 2002
