FJX3904TF ,NPN Epitaxial Silicon TransistorFJX3904FJX39043General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorNPN Epitaxial ..
FJX3906TF ,PNP Epitaxial Silicon TransistorFJX3906FJX39063General Purpose Transistor21SOT-323PNP Epitaxial Silicon Transistor1. Base 2. Emit ..
FJX4001RTF ,PNP Epitaxial Silicon TransistorFJX4001RFJX4001R3Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inter ..
FJX4002RTF ,PNP Epitaxial Silicon TransistorFJX4002RFJX4002RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4003RTF ,PNP Epitaxial Silicon TransistorFJX4003RFJX4003RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4004RTF ,PNP Epitaxial Silicon TransistorFJX4004RFJX4004RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX3904TF
NPN Epitaxial Silicon Transistor
FJX3904 FJX3904 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 40 V CES V Emitter-Base Voltage 6 V EBO I Collector Current 200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 60 V CBO C E BV * Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 6 V EBO E C I Collector Cut-off Current V =30V, V =3V 50 nA CEX CE EB h * DC Current Gain V =1V, I =0.1mA 40 FE CE C V =1V, I =1mA 70 CE C V =1V, I =10mA 100 300 CE C V =1V, I =50mA 60 CE C V =1V, I =100mA 30 CE C V (sat) * Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.2 V CE C B I =50mA, I =5mA 0.3 V C B V (sat) * Base-Emitter Saturation Voltage I =10mA, I =1mA 0.65 0.85 V BE C B I =50mA, I =5mA 0.95 V C B C Output Capacitance V =5V, I =0, f=1MHz 4 pF ob CB E f Current Gain Bandwidth Product V =20V, I =10mA 300 MHz T CE C NF Noise Figure I =100μA, V =5V, R =1KΩ 5dB C CE S f=10Hz to 15.7KHz t Turn On Time V =3V, V =0.5V 70 ns ON CC BE I =10mA, I =1mA C B1 t Turn Off Time V =3V, I =10mA 250 ns OFF CC C I =I =1mA B1 B2 * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% Marking S1A ©2002 Rev. A2, August 2002
