FJX3015RTF ,NPN Epitaxial Silicon TransistorFJX3015RFJX3015RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3904TF ,NPN Epitaxial Silicon TransistorFJX3904FJX39043General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorNPN Epitaxial ..
FJX3906TF ,PNP Epitaxial Silicon TransistorFJX3906FJX39063General Purpose Transistor21SOT-323PNP Epitaxial Silicon Transistor1. Base 2. Emit ..
FJX4001RTF ,PNP Epitaxial Silicon TransistorFJX4001RFJX4001R3Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inter ..
FJX4002RTF ,PNP Epitaxial Silicon TransistorFJX4002RFJX4002RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX4003RTF ,PNP Epitaxial Silicon TransistorFJX4003RFJX4003RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX3015RTF
NPN Epitaxial Silicon Transistor
FJX3015R FJX3015R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=2.2KΩ, R2=10KΩ) 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 S15 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =10mA 33 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μΑ 0.3 V I CE C V (on) Input On Voltage V =0.3V, I =20mA 3 V I CE C R Input Resistor 1.5 2.2 2.9 KΩ 1 R /R Resistor Ratio 0.20 0.22 0.25 1 2 ©2002 Rev. A2, August 2002
