FJX3012RTF ,NPN Epitaxial Silicon TransistorFJX3012RFJX3012RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3013RTF ,NPN Epitaxial Silicon TransistorFJX3013RFJX3013RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3014RTF ,NPN Epitaxial Silicon TransistorFJX3014RFJX3014RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3015RTF ,NPN Epitaxial Silicon TransistorFJX3015RFJX3015RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3904TF ,NPN Epitaxial Silicon TransistorFJX3904FJX39043General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorNPN Epitaxial ..
FJX3906TF ,PNP Epitaxial Silicon TransistorFJX3906FJX39063General Purpose Transistor21SOT-323PNP Epitaxial Silicon Transistor1. Base 2. Emit ..
FST3384QSCX ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX3012RTF
NPN Epitaxial Silicon Transistor
FJX3012R FJX3012R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=47KΩ) • Complement to FJX4012R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C S12 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO E B I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C R Input Resistor 32 47 62 KΩ ©2002 Rev. A3, August 2002
