FJX3010RTF ,NPN Epitaxial Silicon TransistorFJX3010RFJX3010RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3011RTF ,NPN Epitaxial Silicon TransistorFJX3011RFJX3011RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3012RTF ,NPN Epitaxial Silicon TransistorFJX3012RFJX3012RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3013RTF ,NPN Epitaxial Silicon TransistorFJX3013RFJX3013RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3014RTF ,NPN Epitaxial Silicon TransistorFJX3014RFJX3014RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3015RTF ,NPN Epitaxial Silicon TransistorFJX3015RFJX3015RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384QSC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384QSCX ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX3010RTF
NPN Epitaxial Silicon Transistor
FJX3010R FJX3010R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=10KΩ) • Complement to FJX4010R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C S10 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO E B I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C R Input Resistor 7 10 13 KΩ ©2002 Rev. A3, August 2002
