FJX3008RTF ,NPN Epitaxial Silicon TransistorFJX3008RFJX3008RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3009RTF ,NPN Epitaxial Silicon TransistorFJX3009RFJX3009RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3010RTF ,NPN Epitaxial Silicon TransistorFJX3010RFJX3010RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3011RTF ,NPN Epitaxial Silicon TransistorFJX3011RFJX3011RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3012RTF ,NPN Epitaxial Silicon TransistorFJX3012RFJX3012RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3013RTF ,NPN Epitaxial Silicon TransistorFJX3013RFJX3013RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384QSC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384QSCX ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WM ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384WMX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX3008RTF
NPN Epitaxial Silicon Transistor
FJX3008R FJX3008R Switching Application (Bias Resistor Built In) 3 • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =47KΩ, R =22KΩ) 1 2 • Complement to FJX4008R 2 1 SOT-323 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 S08 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μΑ, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 56 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product I =10mA, I =0.5mA 250 MHz T C B C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.8 V I CE C V (on) Input On Voltage V =0.3V, I =2mA 4 V I CE C R Input Resistor 32 47 62 KΩ 1 R /R Resistor Ratio 1.9 2.1 2.4 1 2 ©2002 Rev. A2, August 2002
