FJX2907ATF ,PNP Epitaxial Silicon TransistorFJX2907AFJX2907A3General Purpose Transistor21SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxia ..
FJX3001RTF ,NPN Epitaxial Silicon TransistorFJX3001RFJX3001RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3002RTF ,NPN Epitaxial Silicon TransistorFJX3002RFJX3002RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3003RTF ,NPN Epitaxial Silicon TransistorFJX3003RFJX3003RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJX3004RTF ,NPN Epitaxial Silicon TransistorFJX3004RFJX3004R3Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inter ..
FJX3005RTF ,NPN Epitaxial Silicon TransistorFJX3005RFJX3005RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FST3384MTC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384MTC ,10-Bit Low Power Bus SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Units ConditionTyp(V)Min Max(Note ..
FST3384MTCX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJX2907ATF
PNP Epitaxial Silicon Transistor
FJX2907A FJX2907A 3 General Purpose Transistor 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CES V Emitter-Base Voltage -5 V EBO I Collector Current -600 mA C P Collector Power Dissipation 325 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -60 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -10mA, I =0 -60 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -50V, I =0 -0.01 μA CBO CB E h DC Current Gain V = -10V, I = -0.1mA 75 FE CE E V = -10V, I = -1.0mA 100 CE C V = -10V, I = -10mA 100 CE C *V = -10V, IC= -150mA 100 300 CE *V = -10V, I = -500mA 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = -150mA, I = -15mA -0.4 V CE C B I = -500mA, I = -50mA -1.6 V C B V (sat) * Base-Emitter Saturation Voltage I = -150mA, I = -15mA -1.3 V BE C B I = -500mA, I = -50mA -2.6 V C B f Current Gain Bandwidth Product I = -50mA, V = -20V, 200 MHz T C CE f=100MHz C Output Capacitance V = -10V, I =0 8pF ob CB E f=1.0MHz t Turn On Time V = -30V, I = -150mA 45 ns ON CC C I = -15mA B1 t Turn Off Time V = -6V, I = -150mA 100 ns OFF CC C I =I =15mA B1 B2 * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking S2F ©2002 Rev. B1, August 2002
