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FJX1182OTFFSCN/a30000avaiPNP Epitaxial Silicon Transistor
FJX1182YTFFAIN/a15000avaiPNP Epitaxial Silicon Transistor
FJX1182YTFFAIRCHILDN/a51000avaiPNP Epitaxial Silicon Transistor


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FJX1182OTF-FJX1182YTF
PNP Epitaxial Silicon Transistor
FJX1182 FJX1182 Low Frequency Power Amplifier 3 2 1 SOT-323 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage -35 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Power Dissipation 150 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V = -35, I =0 -0.1 μA CBO CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h DC Current Gain V = -1V, I = -100mA 70 240 FE1 CE C h V = -6V, I = -400mA 25 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.1 -0.25 V CE C B V (on) Base-Emitter On Voltage I = -100mA, V = -1V -0.8 -1.0 V BE C CE f Current Gain Bandwidth Product I = -20mA, V = -6V 200 MHz T C CE C Output Capacitance V = -6V, I = 0 13 pF ob CB E f=1MHz h Classification FE Classification O Y h 70 ~ 140 120 ~ 240 FE1 Marking SDX Grade ©2002 Rev. A2, August 2002
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