FJV42MTF ,NPN High Voltage TransistorFJV42 NPN High Voltage TransistorMarch 2007FJV42NPN High Voltage Transistor3 2SOT-231Marking: 1DF ..
FJV992EMTF ,PNP Epitaxial Silicon TransistorFJV992FJV992Audio Frequency Low Noise Amplifier• Complement to FJV184532SOT-2311. Base 2. Emitter ..
FJV992FMTF ,PNP Epitaxial Silicon TransistorFJV992FJV992Audio Frequency Low Noise Amplifier• Complement to FJV184532SOT-2311. Base 2. Emitter ..
FJX1182OTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FJX1182YTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FJX1182YTF ,PNP Epitaxial Silicon TransistorFJX1182FJX1182Low Frequency Power Amplifier321SOT-3231. Base 2. Emitter 3. CollectorPNP Epitaxi ..
FST3384MTC ,10-Bit Low Power Bus SwitchFST3384 10-Bit Low Power Bus SwitchSeptember 1997Revised November 2000FST338410-Bit Low Power Bus S ..
FST3384MTC ,10-Bit Low Power Bus SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Units ConditionTyp(V)Min Max(Note ..
FST3384MTCX ,10-Bit Low Power Bus SwitchFeaturesThe Fairchild Switch FST3384 provides 10 bits of high-
FJV42MTF
NPN High Voltage Transistor
FJV42 NPN High Voltage Transistor March 2007 FJV42 NPN High Voltage Transistor 3 2 SOT-23 1 Marking: 1DF 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 350 V CBO V Collector-Emitter Voltage 350 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C T Storage Temperature Range -55~150 °C STG P Collector Power Dissipation 350 mW C * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics Symbol Parameter Value Units R (j-a) Thermal Resistance, Junction to Ambiet 357 °C/W TH Electrical Characteristics T = 25°C unless otherwise noted C Symbol Parameter Test Condition MIN MAX Units V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0 350 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 uA, IE = 0 350 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 uA, IC = 0 6 V ICBO Collector-Cutoff Current VCB = 200 V, IE = 0 0.1 uA IEBO Emitter-Cutoff Current VEB = 5.0 V, IC = 0 0.1 uA hFE DC Current Gain* IC = 1.0 mA, VCE = 10 V 25 IC = 10 mA, VCE = 10 V 40 IC = 30 mA, VCE = 10 V 40 VCE(sat) Collector-Emitter Saturation Voltage * IC = 20 mA, IB = 2.0 mA 0.5 V VBE(sat) Base-Emitter Breakdown Voltage * IC = 20 mA, IB = 2.0 mA 0.9 V fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 20V, f =100 MHz 50 MHz Ccb Output Capacitance VCB = 20 V, IE = 0, f = 1.0 MHz 3 pF * Pulse Test: PW≤300µs, Duty Cycle≤2% ©2007 1 FJV42 Rev. A
