FJV4108RMTF ,PNP Epitaxial Silicon TransistorFJV4108RFJV4108RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV4109RMTF ,PNP Epitaxial Silicon TransistorFJV4109RFJV4109RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV4110RMTF ,PNP Epitaxial Silicon TransistorFJV4110RFJV4110RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV4111RMTF ,PNP Epitaxial Silicon TransistorFJV4111RFJV4111RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV4112RMTF ,PNP Epitaxial Silicon TransistorFJV4112RFJV4112RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV4113RMTF ,PNP Epitaxial Silicon TransistorFJV4113RFJV4113RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3383QSCX ,10-Bit Low Power Bus-Exchange SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Min Typ Max Units Conditions(V)(No ..
FST3383QSCX ,10-Bit Low Power Bus-Exchange SwitchFST3383 10-Bit Low Power Bus Exchange SwitchDecember 1993Revised December 2000FST3383 10-Bit Low Po ..
FST3383QSCX ,10-Bit Low Power Bus-Exchange SwitchElectrical CharacteristicsT = −40°C to +85°CAVCCSymbol Parameter Min Typ Max Units Conditions(V)(No ..
FST3383WMX ,10-Bit Low Power Bus-Exchange SwitchFeaturesThe FST3383 provides two sets of high-speed CMOS TTL-
FJV4108RMTF
PNP Epitaxial Silicon Transistor
FJV4108R FJV4108R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =47KΩ, R =22KΩ) 1 2 • Complement to FJV3108R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit C Marking R1 B R78 R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -10 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 56 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz V (off) Input Off Voltage V = -5V, I = -100μA-0.8 V I CE C V (on) Input On Voltage V = -0.3V, I = -2mA -4 V I CE C R Input Resistor 32 47 62 KΩ 1 R /R Resistor Ratio 1.9 2.1 2.4 1 2 ©2002 Rev. A, August 2002
