FJV3112RMTF ,NPN Epitaxial Silicon TransistorFJV3112RFJV3112RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3113RMTF ,NPN Epitaxial Silicon TransistorFJV3113RFJV3113RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3114RMTF ,NPN Epitaxial Silicon TransistorFJV3114RFJV3114RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3115RMTF ,NPN Epitaxial Silicon TransistorFJV3115RFJV3115RSwitching Application (Bias Resistor Built In)3• Switching circuit, Inverter, Inter ..
FJV4101RMTF ,PNP Epitaxial Silicon TransistorFJV4101RFJV4101RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV4102RMTF ,PNP Epitaxial Silicon TransistorFJV4102RFJV4102RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3383MTC ,10-Bit Low Power Bus-Exchange SwitchFeaturesThe FST3383 provides two sets of high-speed CMOS TTL-
FJV3112RMTF
NPN Epitaxial Silicon Transistor
FJV3112R FJV3112R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R=47KΩ) • Complement to FJV4112R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R32 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO E B I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C R Input Resistor 32 47 62 KΩ ©2002 Rev. A, August 2002
