FJV3109RMTF ,NPN Epitaxial Silicon TransistorFJV3109RFJV3109RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3110RMTF ,NPN Epitaxial Silicon TransistorFJV3110RFJV3110RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3111RMTF ,NPN Epitaxial Silicon TransistorFJV3111RFJV3111RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3112RMTF ,NPN Epitaxial Silicon TransistorFJV3112RFJV3112RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3113RMTF ,NPN Epitaxial Silicon TransistorFJV3113RFJV3113RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3114RMTF ,NPN Epitaxial Silicon TransistorFJV3114RFJV3114RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3345QSCX ,8-Bit Bus SwitchFST3345 8-Bit Bus SwitchJune 1997Revised March 2005FST33458-Bit Bus Switch
FST3383 ,10-Bit Low Power Bus Exchange SwitchFST3383 10-Bit Low Power Bus Exchange SwitchDecember 1993Revised December 2000FST3383 10-Bit Low Po ..
FST3383MTC ,10-Bit Low Power Bus-Exchange SwitchFeaturesThe FST3383 provides two sets of high-speed CMOS TTL-
FJV3109RMTF
NPN Epitaxial Silicon Transistor
FJV3109R FJV3109R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R=4.7KΩ) • Complement to FJV4109R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R29 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO E B I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.70 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C R Input Resistor 3.2 4.7 6.2 KΩ ©2002 Rev. A, August 2002
