FJV3107RMTF ,NPN Epitaxial Silicon TransistorFJV3107RFJV3107RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3108RMTF ,NPN Epitaxial Silicon TransistorFJV3108RFJV3108RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3109RMTF ,NPN Epitaxial Silicon TransistorFJV3109RFJV3109RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3110RMTF ,NPN Epitaxial Silicon TransistorFJV3110RFJV3110RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3111RMTF ,NPN Epitaxial Silicon TransistorFJV3111RFJV3111RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3112RMTF ,NPN Epitaxial Silicon TransistorFJV3112RFJV3112RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3345MTCX ,8-Bit Bus SwitchFST3345 8-Bit Bus SwitchJune 1997Revised March 2005FST33458-Bit Bus Switch
FST3345MTCX ,8-Bit Bus SwitchFeaturesThe Fairchild Switch FST3345 provides 8-bits of high-
FJV3107RMTF
NPN Epitaxial Silicon Transistor
FJV3107R FJV3107R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =22KΩ, R =47KΩ) 1 2 • Complement to FJV4107R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R27 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μΑ, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C V (off) Input Off Voltage V =5V, I =100μA0.4 V I CE C V (on) Input On Voltage V =0.3V, I =2mA 2.5 V I CE C R Input Resistor 15 22 29 KΩ 1 R /R Resistor Ratio 0.42 0.47 0.52 1 2 ©2002 Rev. A, August 2002
