FJV3102RMTF ,NPN Epitaxial Silicon TransistorFJV3102RFJV3102RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3103RMTF ,NPN Epitaxial Silicon TransistorFJV3103RFJV3103RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3105RMTF ,NPN Epitaxial Silicon TransistorFJV3105RFJV3105RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3106RMTF ,NPN Epitaxial Silicon TransistorFJV3106RFJV3106RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3107RMTF ,NPN Epitaxial Silicon TransistorFJV3107RFJV3107RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3108RMTF ,NPN Epitaxial Silicon TransistorFJV3108RFJV3108RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3345 ,8-Bit Bus SwitchFeaturesThe Fairchild Switch FST3345 provides 8-bits of high-
FJV3102RMTF
NPN Epitaxial Silicon Transistor
FJV3102R FJV3102R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =10KΩ, R =10KΩ) 1 2 • Complement to FJV4102R 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R22 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 30 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.3V, I =10mA 3 V I CE C R Input Resistor 7 10 13 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A, July 2002
