FJV1845PMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV1845PMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV1845UMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV3101RMTF ,NPN Epitaxial Silicon TransistorFJV3101RFJV3101RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3102RMTF ,NPN Epitaxial Silicon TransistorFJV3102RFJV3102RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJV3103RMTF ,NPN Epitaxial Silicon TransistorFJV3103RFJV3103RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3306MTCX ,2-Bit Low Power Bus SwitchFST3306 2-Bit Low Power Bus SwitchFebruary 2001Revised February 2001FST33062-Bit Low Power Bus Swit ..
FST3345 ,8-Bit Bus SwitchFeaturesThe Fairchild Switch FST3345 provides 8-bits of high-
FJV1845EMTF-FJV1845PMTF-FJV1845UMTF
NPN Epitaxial Silicon Transistor
FJV1845 FJV1845 Amplifier Transistor • Complement to FJV992 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 120 V CBO V Collector-Emitter Voltage 120 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C I Base Current 10 mA B P Collector Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =120V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 50 nA EBO EB C h DC Current Gain V =6V, I =0.1mA 150 580 FE1 CE C h V =6V, I =1mA 200 600 1200 FE2 CE C V (on) Base-Emitter On Voltage V =6V, I=1mA 0.550.590.65 V BE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.07 0.3 V CE C B f Current Gain Bandwidth Product V =6V, I =1mA 50 110 MHz T CE C C Output Capacitance V =30V, I =0, f=1MHz 1.6 2.5 pF ob CB E h Classification FE2 Classification P F E U h 200 ~ 400 300 ~ 600 400 ~ 800 600 ~ 1200 FE2 Marking 6E h Classification FE ©2002 Rev. B1, August 2002
