FJT44TF ,NPN Epitaxial Silicon TransistorFJT44FJT44High Voltage Transistor1SOT-2231.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Tr ..
FJV1845EMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV1845PMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV1845PMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV1845UMTF ,NPN Epitaxial Silicon TransistorFJV1845FJV1845Amplifier Transistor• Complement to FJV992 32SOT-2311. Base 2. Emitter 3. Collector ..
FJV3101RMTF ,NPN Epitaxial Silicon TransistorFJV3101RFJV3101RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST32X245 ,16-Bit Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsMin Typ Max(V)(N ..
FST32X245 ,16-Bit Bus SwitchFeaturesThe Fairchild Switch FST32X245 provides 16-bits of high
FJT44KTF-FJT44TF
NPN Epitaxial Silicon Transistor
FJT44 FJT44 High Voltage Transistor 1 SOT-223 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 300 mA C P Collector Dissipation (T =25°C) 2 W C C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 500 V CBO C B BV * Collector -Emitter Breakdown Voltage I =1mA, I =0 400 V CEO C B BV Emitter-Base Breakdown Voltage I =100μA, I =0 6 V EBO E C I Collector Cut-off Current V =400V, I=0 0.1 μA CBO CB E I Collector Cut-off Current V =400V, I =0 0.5 μA CES CE B I Emitter Cut-off Current V =4V, I =0 0.1 μA EBO EB C h * DC Current Gain V =10V, I =1mA 40 FE CE C V =10V, I =10mA 50 200 CE C V =10V, I =50mA 45 CE C V =10V, I =100mA 40 CE C V (sat) * Collector-Emitter Saturation Voltage I =1mA, I =0.1mA 0.4 V CE C B I =10mA, I =1mA 0.5 V C B I =50mA, I =5mA 0.75 V C B V (sat) * Base-Emitter Saturation Voltage I =10mA, I =1mA 0.75 V BE C B C Output Capacitance V =20V, I =0, f=1MHz 7 pF ob CB E * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A3, August 2002
