FJPF13007TU ,NPN Silicon TransistorFJPF13007FJPF13007High Voltage Switch Mode Application• High Speed Switching• Suitable for Switchin ..
FJPF13009TU ,NPN Silicon TransistorFJPF13009FJPF13009High Voltage Switch Mode Application High Speed Switching Suitable for Switchin ..
FJPF3305TU ,NPN Silicon TransistorFJPF3305FJPF3305High Voltage Switch Mode Application• High Speed Switching• Suitable for Electronic ..
FJPF5021OTU ,NPN Silicon TransistorFJPF5021FJPF5021High Voltage and High Reliability High Speed Switching : t = 0.1µ s(Typ.)FWide S ..
FJPF6806D ,NPN Triple Diffused Planar Silicon TransistorFJPF6806DFJPF6806DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) ..
FJT1100 ,Ultra Low Leakage Diodes' - . FAIRCHILD SEMICONDUCTOR an yirt_,1yani:rv unanua 7 (r
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FST3257MTC ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST3257MTCX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST3257MX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST3257 is a quad 2:1 high-speed
FJPF13007TU
NPN Silicon Transistor
FJPF13007 FJPF13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector- Base Voltage 700 V CBO V Collector- Emitter Voltage 400 V CEO V Emitter- Base Voltage 9 V EBO I Collector Current (DC) 8 A C I Collector Current (Pulse) 16 A CP I Base Current 4 A B P Collector Dissipation (T =25°C) 40 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 10mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 9V, I = 0 1 mA EBO EB C h DC Current Gain V = 5V, I = 2A 8 60 FE CE C V = 5V, I = 5A 5 30 CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 0.4A 1 V CE C B I = 5A, I = 1A 2 V C B I = 8A, I = 2A 3 V C B V (sat) Base-Emitter Saturation Voltage I = 2A, I = 0.4A 1.2 V BE C B I = 5A, I = 1A 1.6 V C B C Output Capacitance V = 10V , f = 0.1MHz 110 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V =125V, I = 5A 1.6 μs ON CC C I = - I = 1A t Storage Time B1 B2 3 μs STG R = 50Ω L t Fall Time 0.7 μs F * Pulse Test: PW≤300μs, Duty Cycle≤2% h Classification FE Classification R(H1) O(H2) h 15 ~ 28 26 ~ 39 FE1 ©2004 Rev. B, July 2004
