FJP3305 ,NPN Silicon TransistorFJP3305FJP3305High Voltage Switch Mode Application• High Speed Switching• Suitable for Electronic B ..
FJP5027 ,NPN Silicon TransistorFJP5027FJP5027High Voltage and High Reliability• High Speed Switching•Wide SOATO-22011.Base 2.Co ..
FJP5027RTU , Wide SOA
FJP5027RTU , Wide SOA
FJP5321TU ,NPN Triple Diffused Planar Silicon TransistorFJP5321FJP5321High Voltage and High Reliability• High speed Switching• Wide Safe Operating AreaTO-2 ..
FJP5321TU ,NPN Triple Diffused Planar Silicon TransistorFJP5321FJP5321High Voltage and High Reliability• High speed Switching• Wide Safe Operating AreaTO-2 ..
FST3257M ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsTyp(V)Min Max(No ..
FST3257MTC ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST3257MTCX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFST3257 Quad 2:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3257Quad ..
FST3257MX ,Quad 2:1 Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST3257 is a quad 2:1 high-speed
FJP3305
NPN Silicon Transistor
FJP3305 FJP3305 High Voltage Switch Mode Application • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 4 A C I Collector Current (Pulse) 8 A CP I Base Current 2 A B P Collector Dissipation (T =25°C) 75 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =500μA, I =0 700 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 400 V CEO C B BV Emitter-Base Breakdown Voltage I =500μA, I =0 9 V EBO E C I Collector Cut-off Current V =700V, I =0 1 μA CBO CB E I Emitter Cut-off Current V =9V, I =0 1 μA EBO EB C h * DC Current Gain V =5V, I =1A 19 35 FE1 CE C h FE2 V =5V, I =2A 8 40 CE C V (sat) Collector-Emitter Saturation Voltage I =1A, I =0.2A 0.5 V CE C B I =2A, I =0.5A 0.6 V C B I =4A, I =1A 1 V C B V (sat) Base-Emitter On Voltage I =1A, I =0.2A 1.2 V BE C B I =2A, I =0.5A 1.6 V C B f Current Gain Bandwidth Product V =5V, I =1A 4 MHz T CE C C Output Capacitance V =10V, f=1MHz 65 pF ob CB t Turn On Time V =125V, 0.8 μs ON CC I =2A=5I =-5I t Storage Time C B1 B2 4 μs STG R =62.5Ω L t Fall Time 0.9 μs F * Pulse test: PW≤300μs, Duty Cycle≤2% h Classification FE Classification R O h 19 ~ 28 26 ~ 35 FE2 ©2004 Rev. A, March 2004
