FJP13009TU ,NPN Silicon TransistorFJP13009FJP13009High Voltage Switch Mode Application High Speed Switching Suitable for Switching ..
FJP3305 ,NPN Silicon TransistorFJP3305FJP3305High Voltage Switch Mode Application• High Speed Switching• Suitable for Electronic B ..
FJP5027 ,NPN Silicon TransistorFJP5027FJP5027High Voltage and High Reliability• High Speed Switching•Wide SOATO-22011.Base 2.Co ..
FJP5027RTU , Wide SOA
FJP5027RTU , Wide SOA
FJP5321TU ,NPN Triple Diffused Planar Silicon TransistorFJP5321FJP5321High Voltage and High Reliability• High speed Switching• Wide Safe Operating AreaTO-2 ..
FST3253QSC ,Dual 4:1 Multiplexer/Demultiplexer Bus SwitchFST3253 Dual 4:1 Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised December 1999FST3253Dual ..
FST3253QSCX ,Dual 4:1 Multiplexer/Demultiplexer Bus SwitchFeaturesThe Fairchild Switch FST3253 is a dual 4:1 high-speed
FJP13009-FJP13009TU
NPN Silicon Transistor
FJP13009 FJP13009 High Voltage Switch Mode Application High Speed Switching Suitable for Switching Regulator and Motor Control TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 12 A C I Collector Current (Pulse) 24 A CP I Base Current 6 A B P Collector Dissipation (T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units V (sus) Collector-Emitter Sustaining Voltage I = 10mA, I = 0 400 V CEO C B I Emitter Cut-off Current V = 9V, I = 0 1 mA EBO EB C h * DC Current Gain V = 5V, I = 5A 8 40 FE CE C V = 5V, I = 8A 6 30 CE C V (sat) * Collector-Emitter Saturation Voltage I = 5A, I = 1A 1 V CE C B I = 8A, I = 1.6A 1.5 V C B I = 12A, I = 3A 3 V C B V (sat) * Base-Emitter Saturation Voltage I = 5A, I = 1A 1.2 V BE C B I = 8A, I = 1.6A 1.6 V C B C Output Capacitance V = 10V, f = 0.1MHz 180 pF ob CB f Current Gain Bandwidth Product V = 10V, I = 0.5A 4 MHz T CE C t Turn On Time V = 125V, I = 8A 1.1 μs ON CC C I = - I = 1.6A t Storage Time B1 B2 3 μs STG R = 15,6Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty cycle≤2% ©2003 Rev. A, May 2003
