FJN4309R ,PNP Epitaxial Silicon TransistorFJN4309RFJN4309RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
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FJN4309R
PNP Epitaxial Silicon Transistor
FJN4309R FJN4309R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to FJN3309R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage -40 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V R EBO B I Collector Current -100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -40 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -40 V CEO C B I Collector Cut-off Current V = -30V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.3 V CE C B C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1MHz f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C R Input Resistor 3.2 4.7 6.2 KΩ ©2002 Rev. A, August 2002
