FJN4308R ,PNP Epitaxial Silicon TransistorFJN4308RFJN4308RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4309R ,PNP Epitaxial Silicon TransistorFJN4309RFJN4309RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4309R ,PNP Epitaxial Silicon TransistorFJN4309RFJN4309RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN598JC , Capacitor Microphone Applications
FJN598JC , Capacitor Microphone Applications
FJNS4202RTA ,PNP Epitaxial Silicon TransistorFJNS4202RFJNS4202RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Inte ..
FST3245MTC ,8-Bit Bus SwitchFST3245 8-Bit Bus SwitchJune 1997Revised March 2005FST32458-Bit Bus Switch
FST3245MTCX ,8-Bit Bus SwitchFeaturesThe Fairchild Switch FST3245 provides 8-bits of high-
FJN4308R
PNP Epitaxial Silicon Transistor
FJN4308R FJN4308R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =47KΩ, R =22KΩ) 1 2 • Complement to FJN3308R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO R1 V Emitter-Base Voltage -10 V B EBO I Collector Current -100 mA C R2 P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 56 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz V (off) Input Off Voltage V = -5V, I = -100μA-0.8 V I CE C V (on) Input On Voltage V = -0.3V, I = -2mA -4 V I CE C R Input Resistor 32 47 62 KΩ 1 R /R Resistor Ratio 1.9 2.1 2.4 1 2 ©2002 Rev. A, August 2002
