FJN4306R ,PNP Epitaxial Silicon TransistorFJN4306RFJN4306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4307R ,PNP Epitaxial Silicon TransistorFJN4307RFJN4307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4307R ,PNP Epitaxial Silicon TransistorFJN4307RFJN4307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4308R ,PNP Epitaxial Silicon TransistorFJN4308RFJN4308RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4308R ,PNP Epitaxial Silicon TransistorFJN4308RFJN4308RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4309R ,PNP Epitaxial Silicon TransistorFJN4309RFJN4309RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3245MTC ,8-Bit Bus SwitchElectrical CharacteristicsT
FJN4306R
PNP Epitaxial Silicon Transistor
FJN4306R FJN4306R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =10KΩ, R =47KΩ) 1 2 • Complement to FJN3306R TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO R1 V Emitter-Base Voltage -10 V B EBO I Collector Current -100 mA C R2 P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, I =0 -50 V CEO C B I Collector Cut-off Current V = -40V, I =0 -0.1 μA CBO CB E h DC Current Gain V = -5V, I = -5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -0.5mA -0.3 V CE C B C Output Capacitance V = -10V, I =0 5.5 pF ob CB E f=1.0MHz f Current Gain Bandwidth Product V = -10V, I = -5mA 200 MHz T CE C V (off) Input Off Voltage V = -5V, I = -100μA-0.3 V I CE C V (on) Input On Voltage V = -0.3V, I = -1mA -1.4 V I CE C R Input Resistor 7 10 13 KΩ 1 R /R Resistor Ratio 0.19 0.21 0.24 1 2 ©2002 Rev. A, July 2002
