FJN3313R ,NPN Epitaxial Silicon TransistorFJN3313RFJN3313RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4302R ,NPN Epitaxial Silicon TransistorFJN4302RFJN4302RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4303R ,PNP Epitaxial Silicon TransistorFJN4303RFJN4303RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4306R ,PNP Epitaxial Silicon TransistorFJN4306RFJN4306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4307R ,PNP Epitaxial Silicon TransistorFJN4307RFJN4307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4307R ,PNP Epitaxial Silicon TransistorFJN4307RFJN4307RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3244QSCX ,8-Bit Bus SwitchElectrical CharacteristicsT
FJN3313R
NPN Epitaxial Silicon Transistor
FJN3313R FJN3313R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =2.2KΩ, R =47KΩ) 1 2 • Complement to FJN4313R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO R1 B V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C R2 P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.2V, I =5mA 1.1 V I CE C R Input Resistor 1.5 2.2 2.9 KΩ 1 R /R Resistor Ratio 0.042 0.047 0.052 1 2 ©2002 Rev. A, August 2002
