FJN3311R ,NPN Epitaxial Silicon TransistorFJN3311RFJN3311RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3311R ,NPN Epitaxial Silicon TransistorFJN3311RFJN3311RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3313R ,NPN Epitaxial Silicon TransistorFJN3313RFJN3313RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4302R ,NPN Epitaxial Silicon TransistorFJN4302RFJN4302RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4303R ,PNP Epitaxial Silicon TransistorFJN4303RFJN4303RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN4306R ,PNP Epitaxial Silicon TransistorFJN4306RFJN4306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3244QSCX ,8-Bit Bus SwitchFST3244 8-Bit Bus SwitchJune 1997Revised January 2005FST32448-Bit Bus Switch
FST3244QSCX ,8-Bit Bus SwitchElectrical CharacteristicsT
FJN3311R
NPN Epitaxial Silicon Transistor
FJN3311R FJN3311R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=22KΩ) • Complement to FJN4311R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO R V Emitter-Base Voltage 5 V EBO B I Collector Current 100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO E B I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C R Input Resistor 15 22 29 KΩ ©2002 Rev. A, August 2002
