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FJN3303RFAILCHILN/a1133avaiNPN Epitaxial Silicon Transistor


FJN3303R ,NPN Epitaxial Silicon TransistorFJN3303RFJN3303RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
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FJN3303R
NPN Epitaxial Silicon Transistor
FJN3303R FJN3303R Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R =22KΩ, R =22KΩ) 1 2 • Complement to FJN4303R TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Equivalent Circuit Symbol Parameter Value Units C V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V R1 CEO B V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C R2 P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG E Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 56 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.3V, I =5mA 3.0 V I CE C R Input Resistor 15 22 29 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A, July 2002
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