FJMA790 ,PNP Epitaxial Silicon Transistorapplications• High Collector current• Low Collector-Emitter Saturation Voltage•RoHS Compliant Pin ..
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FJMA790
PNP Epitaxial Silicon Transistor
FJMA790 PNP Epitaxial Silicon Transistor May 2008 FJMA790 tm PNP Epitaxial Silicon Transistor High current surface mount PNP silicon switching transistor for load management in portable applications • High Collector current • Low Collector-Emitter Saturation Voltage •RoHS Compliant Pin 1 Pin 3 C 1 6 C Collector Emitter C 2 5 C 3 B 4 E Pin 6 Pin 4 MicroFET2X2 Absolute Maximum Ratings T = 25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -35 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -2 A C P Power Dissipation Note1) 1.56 W D Note2) 0.8 W T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Thermal Characteristics T =25°C unless otherwise noted a Symbol Parameter Max. Units RΘ Thermal Resistance, Junction to Ambient Note1) 80 °C/W JA Note2) 154 °C/W 2 Note1): The device mounted on a 1inch pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material. Note2): The device mounted on a minimum pad of 2 oz copper pad on a 1.5 × 1.5 in. board of FR-4 material ©2008 1 FJMA790 Rev. A2
