FJL6920TU ,NPN Triple Diffused Planar Silicon TransistorFJL6920FJL6920High Voltage Color Display Horizontal Deflection Output • High Collector-Base Break ..
FJMA790 ,PNP Epitaxial Silicon Transistorapplications• High Collector current• Low Collector-Emitter Saturation Voltage•RoHS Compliant Pin ..
FJN3303R ,NPN Epitaxial Silicon TransistorFJN3303RFJN3303RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3303RBU , Switching Application (Bias Resistor Built In)
FJN3306R ,NPN Epitaxial Silicon TransistorFJN3306RFJN3306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FJN3306R ,NPN Epitaxial Silicon TransistorFJN3306RFJN3306RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3126QSC ,4-Bit Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsTyp (V)Min Max(N ..
FST3126QSCX ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3126 provides four high-speed
FJL6920TU
NPN Triple Diffused Planar Silicon Transistor
FJL6920 FJL6920 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BV = 1700V CBO • Low Saturation Voltage : V (sat) = 3V (Max.) CE • For Color Monitor 1 TO-264 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units V Collector-Base Voltage 1700 V CBO V Collector-Emitter Voltage 800 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 20 A C I * Collector Current (Pulse) 30 A CP P Collector Dissipation 200 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Pulse Test: PW=300μs, duty Cycle=2% Pulsed Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Conditions Min. Typ. Max. Units I Collector Cut-off Current V =1400V, R =0 1 mA CES CB BE I Collector Cut-off Current V =800V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 1 mA EBO EB C BV Collector-Base Breakdown Voltage I =500μA, I =0 1700 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 800 V CEO C B BV Emitter-Base Breakdown Voltage I =500μA, I =0 6 V EBO E C h DC Current Gain V =5V, I =1A 8 FE1 CE C h V =5V, I =11A 5.5 8.5 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =11A, I =2.75A 3 V CE C B V (sat) Base-Emitter Saturation Voltage I =11A, I =2.75A 1.5 V BE C B t * Storage Time V =200V, I =10A, R =20Ω 3 μs STG CC C L I =2.0A, I = - 4.0A t * Fall Time B1 B2 0.15 0.2 μs F * Pulse Test: PW=20μs, duty Cycle=1% Pulsed Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 0.625 °C/W θjC ©2001 Rev. A, May 2001
