FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FJL6920TU ,NPN Triple Diffused Planar Silicon TransistorFJL6920FJL6920High Voltage Color Display Horizontal Deflection Output • High Collector-Base Break ..
FJMA790 ,PNP Epitaxial Silicon Transistorapplications• High Collector current• Low Collector-Emitter Saturation Voltage•RoHS Compliant Pin ..
FJN3303R ,NPN Epitaxial Silicon TransistorFJN3303RFJN3303RSwitching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interf ..
FST3126MTCX ,4-Bit Bus SwitchFST3126 4-Bit Bus SwitchAugust 1997Revised January 2005FST31264-Bit Bus Switch
FST3126QSC ,4-Bit Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsTyp (V)Min Max(N ..
FST3126QSCX ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3126 provides four high-speed
FJL4315OTU
NPN Epitaxial Silicon Transistor
FJL4315 FJL4315 Audio Power Amplifier High Current Capability : I =15A C High Power Dissipation Wide S.O.A Complement to FJL4215 TO-264 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 230 V CBO V Collector-Emitter Voltage 230 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current(DC) 15 A C I Base Current 1.5 A B P Collector Dissipation (T =25°C) 150 W C C T Junction Temperature 150 °C J T Storage Temperature - 50 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =5mA, I =0 230 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, R =∞ 230 V CEO C BE BV Emitter-Base Breakdown Voltage I =5mA, I =0 5 V EBO E C I Collector Cut-off Current V =230V, I =0 5.0 uA CBO CB E I Emitter Cut-off Current V =5V, I =0 5.0 uA EBO EB C h * DC Current Gain V =5V, I =1A 55 160 FE1 CE C h DC Current Gain V =5V, I =7A 35 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =8A, I =0.8A 0.4 3.0 V CE C B V (on) Base-Emitter On Voltage V =5V, I =7A 1.0 1.5 V BE CE C f Current Gain Bandwidth Product V =5V, I =1A 30 MHz T CE C C Output Capacitance V =10V, f=1MHz 200 pF ob CB * Pulse Test : PW=20us h Classification FE Classification R O h 55 ~ 110 80 ~ 160 FE1 ©2003 Rev. B, March 2003
