FJL4215OTU ,PNP Epitaxial Silicon TransistorFJL4215FJL4215Audio Power Amplifier High Current Capability I = -15A)C High Power DissipationWid ..
FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FJL6920TU ,NPN Triple Diffused Planar Silicon TransistorFJL6920FJL6920High Voltage Color Display Horizontal Deflection Output • High Collector-Base Break ..
FJMA790 ,PNP Epitaxial Silicon Transistorapplications• High Collector current• Low Collector-Emitter Saturation Voltage•RoHS Compliant Pin ..
FST3126MTCX ,4-Bit Bus SwitchFST3126 4-Bit Bus SwitchAugust 1997Revised January 2005FST31264-Bit Bus Switch
FST3126QSC ,4-Bit Bus SwitchElectrical CharacteristicsT = −40 °C to +85 °CAVCCSymbol Parameter Units ConditionsTyp (V)Min Max(N ..
FST3126QSCX ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3126 provides four high-speed
FJL4215OTU
PNP Epitaxial Silicon Transistor
FJL4215 FJL4215 Audio Power Amplifier High Current Capability I = -15A) C High Power Dissipation Wide S.O.A Complement to FJL4315 TO-264 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Ratings Units V Collector-Base Voltage -230 V CBO V Collector-Emitter Voltage -230 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -13 A C I Base Current -1.5 A B P Collector Dissipation (T =25°C) 150 W C C T Junction Temperature 150 °C J T Storage Temperature - 50 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-5mA, I =0 -230 V CBO C E BV Collector-Emitter Breakdown Voltage I =-10mA, R =∞ -230 V CEO C BE BV Emitter-Base Breakdown Voltage I =-5mA, I =0 -5 V EBO E C I Collector Cut-off Current V =-230V, I =0 -5.0 μA CBO CB E I Emitter Cut-off Current V =-5V, I =0 -5.0 μA EBO EB C h * DC Current Gain V =-5V, I =-1A 55 160 FE1 CE C h DC Current Gain V =-5V, I =-7A 35 60 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =-8A, I =-0.8A -0.4 -3.0 V CE C B V (on) Base-Emitter On Voltage V =-5V, I =-7A -1.0 -1.5 V BE CE C f Current Gain Bandwidth Product V =-5V, I =-1A 30 MHz T CE C C Output Capacitance V =-10V, f=1MHz 360 pF ob CB * Pulse Test : PW=20us *h Classification FE Classification R O h 55 ~ 110 80 ~ 160 FE1 ©2002 Rev. A, December 2002
