FJH1100 ,Ultra Low Leakage DiodeElectrical Characteristics TA = 25C unless otherwise notedSYM CHARACTERISTICS MIN MAX UNITS T ..
FJH1101 ,Ultra Low Leakage DiodeElectrical Characteristics TA = 25C unless otherwise notedSYM CHARACTERISTICS MIN MAX UNITS T ..
FJI5603D ,NPN Silicon TransistorElectrical Characteristics* T =25°C unless otherwise noted aSymbol Parameter Test Condition Min. Ty ..
FJL4215OTU ,PNP Epitaxial Silicon TransistorFJL4215FJL4215Audio Power Amplifier High Current Capability I = -15A)C High Power DissipationWid ..
FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FJL4315OTU ,NPN Epitaxial Silicon TransistorFJL4315FJL4315Audio Power Amplifier High Current Capability : I =15AC High Power DissipationWide ..
FST3125MX ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
FST3125QSC ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
FST3125QSCX ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3125 provides four high-speed
FJH1100
Ultra Low Leakage Diode
FJH1100 Information Only Data Sheet FINAL REVERSE CURRENT & FORWARD VOLTAGE LIMITS MIGHT BE INCREASED SLIGHTLY General Description: Ultra Low Leakage Diode O Absolute Maximum Ratings* TA = 25C unless otherwise noted Sym Parameter Value Units O TStorage Temperature-55 to +200C stg O TOperating Junction Temperature 175 CJ O PTotal Power Dissipation at T = 25C 250mWDA OO Linear Derating Factor from T = 25C 1.67mW/CA O RThermal Resistance Junction-to-Ambient 300 C/W WWorking Inverse Voltage 15 V IDC Forward Current (IF) 150 mAF *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired Typical Forward Voltages CATHODE 0.500 Minimum BAND 1.0 uA - - - - - - - - - - 530 mV 12.70 Typ 1.000 10 uA - - - - - - - - - - 605 mV LOGO 0.090 (2.28) Diameter FJH 100 uA - - - - - - - - - - 685 mV 0.060 (1.53)11 1.0 mA- - - - - - - - - - 780 mV 00 10 mA- - - - - - - - - - 895 mV 0.022 (0.558) Diameter 0.200 (5.08) 50 mA- - - - - - - - - - 995 mV 0.018 (0.458) Typ 20 mils 0.120 (3.05) 100 mA- - - - - - - - - - 1.07 V OElectrical Characteristics TA = 25C unless otherwise noted SYM CHARACTERISTICS MIN MAX UNITS TEST CONDITIONS B 30VI= VR I 3.0 pAV= 5.0 V RR 10 pAV= 15 V R V 1.05 VI= FF C 2.0 pFV= 0 V, f = 1.0 MHz TR FJH1100 - Rev. A© 1999 Diode Capacitance 50 mAForward Voltage Reverse Leakage 5.0 uABreakdown Voltage iv OJA light. coating will affect the reverse leakage when exposed to This product is light sensitive, any damage to the body at 1.0 micro-ampere. The forward voltage is typically greater than 0.5 volts An Ultra Low Leakage Diode in the DO-35 package.
