FJE5304D ,NPN Triple Diffused Planar Silicon TransistorFJE5304DFJE5304DEquivalent CircuitHigh Voltage High Speed Power Switch CApplication• Wide Safe Oper ..
FJE5304D ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
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FJI5603D ,NPN Silicon TransistorElectrical Characteristics* T =25°C unless otherwise noted aSymbol Parameter Test Condition Min. Ty ..
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FST3125MTCX ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
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FST3125QSCX ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3125 provides four high-speed
FJE5304D
NPN Triple Diffused Planar Silicon Transistor
FJE5304D FJE5304D Equivalent Circuit High Voltage High Speed Power Switch C Application • Wide Safe Operating Area • Built-in Free Wheeling diode B • Suitable for Electronic Ballast Application • Small Variance in Storage Time TO-126 E 1 1.Emitter 2.Collector 3.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 12 V EBO I Collector Current (DC) 4 A C I * Collector Current (Pulse) 8 A CP I Base Current (DC) 2 A B I * Base Current (Pulse) 4 A BP P Collector Dissipation (T =25°C) 30 W C C T Storage Temperature - 65 ~ 150 °C STG * Pulse Test Pulse Width = 5ms, Duty Cycle ≥ 1.0% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = 1mA, I = 0 700 V CBO C E BV Collector-Emitter Breakdown Voltage I = 5mA, I = 0 400 V CEO C B BV Emitter-Base Breakdown Voltage I = 1mA, I = 0 12 V EBO E C I Collector Cut-off Current V = 700V, V = 0 100 mA CES CE EB I Collector Cut-off Current V = 400V, IB = 0 250 mA CEO CE I Emitter Cut-off Current V = 12V, I = 0 100 mA EBO EB C h DC Current Gain V = 5V, I = 10mA 10 FE CE C V = 5V, I = 2A 840 CE C V (sat) Collector-Emitter Saturation Voltage I = 0.5A, I = 0.1A 0.7 V CE C B I = 1A, I = 0.2A 1.0 C B I = 2.5A, I = 0.5A 1.5 C B V (sat) Base-Emitter Saturation Voltage I = 0.5A, I = 0.1A 1.1 V BE C B I = 1A, I = 0.2A 1.2 C B I = 2.5A, I = 0.5A 1.3 C B V Internal Diode Forward Voltage Drop I = 2A 2.5 V f F ©2004 Rev. B, May 2004
