FJE3303H1 ,NPN Silicon Transistor Planar Silicon TransistorFJE3303FJE3303High Voltage Switch Mode
FJE3303H2 ,NPN Silicon Transistor Planar Silicon TransistorApplications• High Speed Switching• Suitable for Electronic Ballast and Switching RegulatorTO-12611 ..
FJE5304D ,NPN Triple Diffused Planar Silicon TransistorFJE5304DFJE5304DEquivalent CircuitHigh Voltage High Speed Power Switch CApplication• Wide Safe Oper ..
FJE5304D ,NPN Triple Diffused Planar Silicon TransistorElectrical Characteristics T =25°C unless otherwise notedCSymbol Parameter Test Condition Min. Typ. ..
FJH1100 ,Ultra Low Leakage DiodeElectrical Characteristics TA = 25C unless otherwise notedSYM CHARACTERISTICS MIN MAX UNITS T ..
FJH1101 ,Ultra Low Leakage DiodeElectrical Characteristics TA = 25C unless otherwise notedSYM CHARACTERISTICS MIN MAX UNITS T ..
FST3125M ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
FST3125MTC ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3125 provides four high-speed
FJE3303H1-FJE3303H2
NPN Silicon Transistor Planar Silicon Transistor
FJE3303 FJE3303 High Voltage Switch Mode Applications • High Speed Switching • Suitable for Electronic Ballast and Switching Regulator TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Transistor Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 700 V CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 9 V EBO I Collector Current (DC) 1.5 A C I *Collector Current (Pulse) 3 A CP I Base Current (DC) 0.75 A B I *Base Current (Pulse) 1.5 A BP P Collector Power Dissipation(T =25°C) 20 W C a T Junction Temperature 150 °C J T Storage Temperature - 65 ~ 150 °C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =500μA, I =0 700 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 400 V CEO C B BV Emitter-Base Breakdown Voltage I =500μA, I=0 9 V EBO E C I Collector Cut-off Current V =700V, I=0 10 μA CBO CB E I Emitter Cut-off Current V =9V, I=0 10 μA EBO EB C h *DC Current Gain V =2V, I =0.5A 8 21 FE1 CE C h FE2 V =2V, I =1.0A 5 CE C V (sat) Collector-Emitter Saturation Voltage I =0.5A, I=0.1A 0.5V CE C B I =1.0A, I=0.25A 1.0V C B I =1.5A, I=0.5A 3.0V C B V (sat) Base-Emitter Saturation Voltage I =0.5A, I=0.1A 1.0V BE C B I =1.0A, I=0.25A 1.2V C B f Current Gain Bandwidth Product V =10V, I =0.1A 4 MHz T CE C t Turn ON Time V =125V, I =1A, 1.1 μs ON CC C I =0.2A, I =-0.2A, t Storage Time B1 B2 4.0 μs STG R = 125Ω L t Fall Time 0.7 μs F * Pulse test: PW≤300μs, Duty Cycle≤2% h Classification FE Classification R O h 8 ~ 16 14 ~ 21 FE1 ©2004 Rev. A, March 2004
