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FJD3076TM ,NPN Epitaxial Silicon TransistorFJD3076FJD3076Power Amplifier
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FJD3076
Power Amplifier Applications
FJD3076 FJD3076 Power Amplifier Applications • Low Collector-Emitter Saturation Voltage D-PACK 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 32 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 2 A C P Collector Dissipation (T =25°C) 1 W C a Collector Dissipation (T =25°C) 10 W C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Emitter Breakdown Voltage I = 1mA, I = 0 32 V CEO C B BV Collector-Base Breakdown Voltage I = 50μA40 V CBO C BV Emitter-Base Breakdown Voltage I = 50μA5 V EBO E I Collector Cut-off Current V = 20V, I = 0 1 μA CBO CB E I Emitter Cut-off Current V = 4V, I = 0 1 μA EBO EB C h DC Current Gain V = 3V, I = 0.5A 130 390 FE CE C V (sat) Collector-Emitter Saturation Voltage I = 2A, I = 0.2A 0.5 0.8 V CE C B f Current Gain Bandwidth Product V = 5V, I = -0.5A, 100 MHz T CE E f = 100MHz C Output Capacitance V = 10V, I = 0A, 50 pF ob CB E f = 1MHz ©2001 Rev. C1, December 2001
