FJC790TF ,PNP Epitaxial Silicon TransistorFJC790FJC790Camera Strobe Flash Application• Complement to FJC690• High Collector Current • Low Col ..
FJD3076 ,Power Amplifier ApplicationsApplications• Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN ..
FJD3076TM ,NPN Epitaxial Silicon TransistorFJD3076FJD3076Power Amplifier
FJD3076TM ,NPN Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN ..
FJE3303H1 ,NPN Silicon Transistor Planar Silicon TransistorFJE3303FJE3303High Voltage Switch Mode
FJE3303H2 ,NPN Silicon Transistor Planar Silicon TransistorApplications• High Speed Switching• Suitable for Electronic Ballast and Switching RegulatorTO-12611 ..
FST3125 ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2001FST31254-Bit Bus Switch
FST3125M ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
FST3125MTC ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3125 provides four high-speed
FJC790TF
PNP Epitaxial Silicon Transistor
FJC790 FJC790 Camera Strobe Flash Application • Complement to FJC690 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 Marking: F79 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -40 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current (DC) -2 A C P Power Dissipation 0.5 W C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I = 0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -10mA, I = 0 -40 V CEO C B BV Emitter-Base Breakdown Voltage I = -100μA, I = 0 -5 V EBO E C I Collector Cut-off Current V = -35V, V = 0 -0.1 μA CEO CE B I Emitter Cut-off Current V = -4V, I = 0 -0.1 μA EBO EB C h DC Current Gain V = -2V, I = -10mA 300 800 FE CE C V = -2V, I = -500mA 250 CE C = -2V, I = -1mA 200 V CE C V = -2V, I = -2mA 150 CE C V (sat) Collector-Emitter Saturation Voltage I = -0.5A, I = -5mA -250 mV CE C B I = -1A, I = -10mA -350 mV C B = -2A, I = -50mA -450 mV I C B (sat) Base-Emitter Saturation Voltage I = -1A, I = -10mA -0.9 V V BE C B (on) Base-Emitter On Voltage V = -2V, I = 1A -0.8 V V BE CE C Collector Output Capacitance V = -10V, I = 0, 20 pF C OB CB E f = 1MHz ©2004 Rev. A, April 2004
