FJC2383 ,NPN Epitaxial Silicon TransistorFJC2383FJC2383Color TV Audio Output & Color TV Vertical Deflection OutputSOT-89NPN Epitaxial Silico ..
FJC2383YTF ,NPN Epitaxial Silicon TransistorFJC2383FJC2383Color TV Audio Output & Color TV Vertical Deflection OutputSOT-89NPN Epitaxial Silico ..
FJC790TF ,PNP Epitaxial Silicon TransistorFJC790FJC790Camera Strobe Flash Application• Complement to FJC690• High Collector Current • Low Col ..
FJD3076 ,Power Amplifier ApplicationsApplications• Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN ..
FJD3076TM ,NPN Epitaxial Silicon TransistorFJD3076FJD3076Power Amplifier
FJD3076TM ,NPN Epitaxial Silicon TransistorApplications• Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN ..
FST3125 ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2001FST31254-Bit Bus Switch
FST3125M ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
FST3125MTC ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3125 provides four high-speed
FJC2383-FJC2383YTF
NPN Epitaxial Silicon Transistor
FJC2383 FJC2383 Color TV Audio Output & Color TV Vertical Deflection Output SOT-89 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Ratings Units V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 160 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 1 A C I Base Current 0.5 A B P Collector Power Dissipation 500 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units I Collector Cut-off Current V =150V, I =0 1 μA CBO CB E I Emitter Cut-off Current V =6V, I =0 1 μA EBO EB C BV Collector-Emitter Breakdown Voltage I =10mA, I=0 160 V CEO C B h DC Current Gain V =5V, I=200mA 100 320 FE CE C V (sat) Collector-Emitter Saturation Voltage I =500mA, I=50mA 1.5V CE C B V (on) Base-Emitter On Voltage V =5V, I =5mA 0.45 0.75 V BE CE C f Current Gain Bandwidth Product V =5V, I =200mA 20 100 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 20 pF ob CB E h Classification FE Classification O Y h 100 ~ 200 160 ~ 320 FE Marking FDY h grade FE ©2004 Rev. A, August 2004
