FJC1963STF ,NPN Epitaxial Silicon TransistorFJC1963FJC1963Audio Power Amplifier
FJC2383 ,NPN Epitaxial Silicon TransistorFJC2383FJC2383Color TV Audio Output & Color TV Vertical Deflection OutputSOT-89NPN Epitaxial Silico ..
FJC2383YTF ,NPN Epitaxial Silicon TransistorFJC2383FJC2383Color TV Audio Output & Color TV Vertical Deflection OutputSOT-89NPN Epitaxial Silico ..
FJC790TF ,PNP Epitaxial Silicon TransistorFJC790FJC790Camera Strobe Flash Application• Complement to FJC690• High Collector Current • Low Col ..
FJD3076 ,Power Amplifier ApplicationsApplications• Low Collector-Emitter Saturation VoltageD-PACK11. Base 2. Collector 3. EmitterNPN ..
FJD3076TM ,NPN Epitaxial Silicon TransistorFJD3076FJD3076Power Amplifier
FST3125 ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2001FST31254-Bit Bus Switch
FST3125M ,4-Bit Bus SwitchFST3125 4-Bit Bus SwitchAugust 1997Revised January 2005FST31254-Bit Bus Switch
FST3125MTC ,4-Bit Bus SwitchFeaturesThe Fairchild Switch FST3125 provides four high-speed
FJC1963QTF-FJC1963STF
NPN Epitaxial Silicon Transistor
FJC1963 FJC1963 Audio Power Amplifier Applications • Complement to FJC1308 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 3 A C P Power Dissipation(T =25°C) 0.5 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =50μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 30 V CEO C B BV Emitter-Base Breakdown Voltage I =50μA, I =0 6 V EBO E C I Collector Cut-off Current V =40V, V =0 0.5 μA CEO CE B I Emitter Cut-off Current V =5V, I =0 0.5 μA EBO EB C h DC Current Gain V =2V, I =0.5A 120 560 FE CE C V (sat) Collector-Emitter Saturation Voltage I =1.5, I =0.15A 0.45 V CE C B V (sat) Base-Emitter Saturation Voltage I =1.5, I =0.15A 1.2 V BE C B h Classification FE Classification Q R S h 120 ~ 270 180 ~ 390 280 ~ 560 FE Marking FCQ h grade FE ©2002 Rev. A1, August 2002
