FJC1308PTF ,PNP Epitaxial Silicon TransistorApplications• Complement to FJC1963• High Collector Current • Low Collector-Emitter Saturation Volt ..
FJC1386QTF ,PNP Epitaxial Silicon TransistorFJC1386FJC1386Low Saturation Transistor Medium Power Amplifier • Complement ..
FJC1386RTF ,PNP Epitaxial Silicon TransistorFJC1386FJC1386Low Saturation Transistor Medium Power Amplifier • Complement ..
FJC1963QTF ,NPN Epitaxial Silicon TransistorApplications• Complement to FJC1308• High Collector Current • Low Collector-Emitter Saturation Volt ..
FJC1963QTF ,NPN Epitaxial Silicon TransistorApplications• Complement to FJC1308• High Collector Current • Low Collector-Emitter Saturation Volt ..
FJC1963STF ,NPN Epitaxial Silicon TransistorFJC1963FJC1963Audio Power Amplifier
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FJC1308PTF
PNP Epitaxial Silicon Transistor
FJC1308 FJC1308 Audio Power Amplifier Applications • Complement to FJC1963 • High Collector Current • Low Collector-Emitter Saturation Voltage SOT-89 1 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current (DC) -3 A C P Power Dissipation(T =25°C) 0.5 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =-50μA, I =0 -30 V CBO C E BV Collector-Emitter Breakdown Voltage I =-1mA, I =0 -30 V CEO C B BV Emitter-Base Breakdown Voltage I =-50μA, I =0 -6 V EBO E C I Collector Cut-off Current V =-20V, V =0 -0.5 μA CEO CE B I Emitter Cut-off Current V =-5V, I =0 -0.5 μA EBO EB C h DC Current Gain V =-2V, I =-0.5A 80 390 FE CE C V (sat) Collector-Emitter Saturation Voltage I =-1.5, I =-0.15A -0.45 V CE C B V (sat) Base-Emitter Saturation Voltage I =-1.5, I =-0.15A -1.5 V BE C B h Classification FE Classification P Q R h 80 ~ 180 120 ~ 270 180 ~ 390 FE Marking FBP h grade FE ©2002 Rev. A1, August 2002
