FJAF6815TU ,NPN Triple Diffused Planar Silicon TransistorFJAF6815FJAF6815High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6910 ,High Voltage Color Display Horizontal Deflection OutputFJAF6910FJAF6910High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6910TU ,NPN Triple Diffused Planar Silicon TransistorFJAF6910FJAF6910High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6916 ,High Voltage Color Display Horizontal Deflection OutputFJAF6916FJAF6916High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6916TU ,NPN Triple Diffused Planar Silicon TransistorFJAF6916FJAF6916High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6920 ,NPN Triple Diffused Planar Silicon TransistorFJAF6920FJAF6920High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FST16861MTD ,20-Bit Bus SwitchFeaturesThe Fairchild Switch FST16861 provides 20-Bits of high-
FJAF6815TU
NPN Triple Diffused Planar Silicon Transistor
FJAF6815 FJAF6815 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BV = 1500V CBO • Low Saturation Voltage : V (sat) = 3V (Max.) CE • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 750 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 15 A C I * Collector Current (Pulse) 25 A CP P Collector Dissipation 60 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Pulse Test: PW=300μs, duty Cycle=2% Pulsed Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units I Collector Cut-off Current V =1400V, R =0 1 mA CES CB BE I Collector Cut-off Current V =800V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 1 mA EBO EB C BV Collector-Base Breakdown Voltage I =500μA, I =0 1500 V CBO C E BV Collector-Emitter Breakdown Voltage I =5mA, I =0 750 V CEO C B BV Emitter-Base Breakdown Voltage I =500μA, I =0 6 V EBO E C h DC Current Gain V =5V, I =1A 10 FE1 CE C h V =5V, I =10A 58 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =10A, I =2.5A 3 V CE C B V (sat) Base-Emitter Saturation Voltage I =10A, I =2.5A 1.5 V BE C B t * Storage Time V =200V, I =8A, R =25Ω 3 μs STG CC C L I =1.6A, I = - 3.2A t *Fall Time B1 B2 0.2 μs F * Pulse Test: PW=20μs, duty Cycle=1% Pulsed Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 2.08 °C/W θjC ©2001 Rev. A, May 2001
