FJAF6810D ,High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In)FJAF6810DFJAF6810DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In) ..
FJAF6815 ,High Voltage Color Display Horizontal Deflection OutputFJAF6815FJAF6815High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6815TU ,NPN Triple Diffused Planar Silicon TransistorFJAF6815FJAF6815High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6910 ,High Voltage Color Display Horizontal Deflection OutputFJAF6910FJAF6910High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6910TU ,NPN Triple Diffused Planar Silicon TransistorFJAF6910FJAF6910High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FJAF6916 ,High Voltage Color Display Horizontal Deflection OutputFJAF6916FJAF6916High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FST16292MTDX ,12-Bit to 24-Bit Multiplexer/Demultiplexer Bus SwitchFST16292 12-Bit to 24-Bit Multiplexer/Demultiplexer Bus SwitchJuly 1997Revised November 2000FST1629 ..
FST16861MTD ,20-Bit Bus SwitchFeaturesThe Fairchild Switch FST16861 provides 20-Bits of high-
FJAF6810D
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In)
FJAF6810D FJAF6810D High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In) • High Collector-Base Breakdown Voltage : BV = 1500V CBO • High Switching Speed : t (typ.) =0.1μs F • For Color TV TO-3PF 1 1.Base 2.Collector 3.Emitter Equivalent Circuit C B NPN Triple Diffused Planar Silicon Transistor 35Ω typ. E Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Rating Units V Collector-Base Voltage 1500 V CBO V Collector-Emitter Voltage 750 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 10 A C I * Collector Current (Pulse) 20 A CP P Collector Dissipation 60 W C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Conditions Min Typ Max Units I Collector Cut-off Current V =1500V, R =0 1 mA CES CB BE I Collector Cut-off Current V =800V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =4V, I =0 40 250 mA EBO EB C BV Base-Emitter Breakdown Voltage I =300mA, I =0 6 V EBO E C h DC Current Gain V =5V, I =1A 7 FE1 CE C h V =5V, I =6A 58 FE2 CE C V (sat) Collector-Emitter Saturation Voltage I =6A, I =1.5A 3 V CE C B V (sat) Base-Emitter Saturation Voltage I =6A, I =1.5A 1.5 V BE C B V Damper Diode Turn On Voltage I = 6A 2 V F F t * Storage Time V =200V, I =6A, R =33Ω 3 μs STG CC C L I =1.2A, I = - 2.4A t * Fall Time B1 B2 0.2 μs F * Pulse Test: PW=20μs, duty Cycle=1% Pulsed Thermal Characteristics T =25°C unless otherwise noted C Symbol Parameter Typ Max Units R Thermal Resistance, Junction to Case 2.08 °C/W θjC ©2001 Rev. B, August 2001
