FJAF4310YTU ,NPN Epitaxial Silicon TransistorFJAF4310FJAF4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wi ..
FJAF6806D ,High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)FJAF6806DFJAF6806DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built In) ..
FJAF6810A ,High Voltage Color Display Horizontal Deflection OutputFJAF6810AFJAF6810AHigh Voltage Color Display Horizontal Deflection Output • High Collector-Base B ..
FJAF6810A ,High Voltage Color Display Horizontal Deflection OutputFJAF6810AFJAF6810AHigh Voltage Color Display Horizontal Deflection Output • High Collector-Base B ..
FJAF6810D ,High Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In)FJAF6810DFJAF6810DHigh Voltage Color Display Horizontal Deflection Output (Damper Diode Built-In) ..
FJAF6815 ,High Voltage Color Display Horizontal Deflection OutputFJAF6815FJAF6815High Voltage Color Display Horizontal Deflection Output • High Collector-Base Bre ..
FST162861MTD ,20-Bit Bus Switch with 25 Ohm Series Resistors in OutputsFST162861 20-Bit Bus Switch with 25 Series Resistors in OutputsMarch 2000Revised January 2005FST16 ..
FST162861MTDX ,20-Bit Bus Switch with 25 Ohm Series Resistors in OutputsFeaturesThe Fairchild Switch FST162861 provides 20-bits of high- 25
FJAF4310-FJAF4310OTU-FJAF4310YTU
NPN Epitaxial Silicon Transistor
FJAF4310 FJAF4310 Audio Power Amplifier • High Current Capability : I =10A C • High Power Dissipation •Wide S.O.A • Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 10 A C I Base Current (DC) 1.5 A B P Collector Dissipation (T =25°C) 80 W C C R Junction to Case 1.48 °C/W θJC T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =5mA, I =0 200 V CBO C E BV Collector-Emitter Breakdown Voltage I =50mA, R =∞ 140 V CEO C BE BV Emitter-Base Breakdown Voltage I =5mA, I =0 6 V EBO E C I Collector Cut-off Current V =200V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =6V, I =0 10 μA EBO EB C h * DC Current Gain V =4V, I =3A 50 180 FE CE C V (sat) Collector-Emitter Saturation Voltage I =5A, I =0.5A 0.5 V CE C B C Output Capacitance V =10V, f=1MHz 250 pF ob CB f Current Gain Bandwidth Product V =5V, I =1A 30 MHz T CE C * Pulse Test : PW=20μs h Classification FE Classification R O Y h 50 ~ 100 70 ~ 140 90 ~ 180 FE ©2002 Rev. A, November 2002
