FJA4310YTU ,NPN Epitaxial Silicon TransistorFJA4310FJA4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wide ..
FJAF4210OTU ,PNP Epitaxial Silicon TransistorFJAF4210FJAF4210Audio Power Amplifier• High Current Capability : I = -10AC• High Power Dissipation• ..
FJAF4210RTU ,PNP Epitaxial Silicon TransistorFJAF4210FJAF4210Audio Power Amplifier• High Current Capability : I = -10AC• High Power Dissipation• ..
FJAF4310 ,NPN Epitaxial Silicon TransistorFJAF4310FJAF4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wi ..
FJAF4310OTU ,NPN Epitaxial Silicon TransistorFJAF4310FJAF4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wi ..
FJAF4310YTU ,NPN Epitaxial Silicon TransistorFJAF4310FJAF4310Audio Power Amplifier• High Current Capability : I =10AC• High Power Dissipation•Wi ..
FST16233MTDX ,16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchFST16233 16-Bit to 32-Bit Multiplexer/Demultiplexer Bus SwitchSeptember 1997Revised November 2000FS ..
FST16245MTD ,16-Bit Bus SwitchFeaturesThe Fairchild Switch FST16245 provides 16-bits of high- 4Ω switch connection between two ..
FST16245MTDX ,16-Bit Bus SwitchElectrical CharacteristicsT = −40°C to +85°CASymbol Parameter V Min Typ Max Units ConditionsCC(V) ( ..
FST162861 ,20-Bit Bus Switch with 25-Ohm Series Resistors in OutputsFeaturesThe Fairchild Switch FST162861 provides 20-Bits of high-
FJA4310RTU-FJA4310YTU
NPN Epitaxial Silicon Transistor
FJA4310 FJA4310 Audio Power Amplifier • High Current Capability : I =10A C • High Power Dissipation •Wide S.O.A • Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted C Symbol Parameter Value Units V Collector-Base Voltage 200 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current (DC) 10 A C I Base Current (DC) 1.5 A B P Collector Dissipation (T =25°C) 100 W C C T Junction Temperature 150 °C J T Storage Temperature - 55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted C Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =5mA, I =0 200 V CBO C E BV Collector-Emitter Breakdown Voltage I =50mA, R =∞ 140 V CEO C BE BV Emitter-Base Breakdown Voltage I =5mA, I =0 6 V EBO E C I Collector Cut-off Current V =200V, I =0 10 μA CBO CB E I Emitter Cut-off Current V =6V, I =0 10 μA EBO EB C h * DC Current Gain V =4V, I =3A 50 180 FE CE C V (sat) Collector-Emitter Saturation Voltage I =5A, I =0.5A 0.5 V CE C B C Output Capacitance V =10V, f=1MHz 250 pF ob CB f Current Gain Bandwidth Product V =5V, I =1A 30 MHz T CE C * Pulse Test : PW=20μs h Classification FE Classification R O Y h 50 ~ 100 70 ~ 140 90 ~ 180 FE ©2002 Rev. B, June 2002
